Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
m →Ge deposition equipment comparison: cluster sputter edit |
No edit summary |
||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Germanium click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Germanium click here]''' | ||
''All text by DTU Nanolab staff'' | |||
== Deposition of Germanium == | == Deposition of Germanium == | ||
Line 17: | Line 18: | ||
! | ! | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
Line 26: | Line 26: | ||
! General description | ! General description | ||
|Thermal deposition of Ge | |Thermal deposition of Ge | ||
|E-beam deposition of Ge | |E-beam deposition of Ge | ||
|Sputter deposition of Ge | |Sputter deposition of Ge | ||
Line 36: | Line 35: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|- | |||
| - | |||
|Ar ion beam clean | |Ar ion beam clean | ||
|RF Ar clean | |RF Ar clean | ||
Line 45: | Line 43: | ||
! Layer thickness | ! Layer thickness | ||
|10Å to about 2000Å (in total distributed on all loaded wafers) | |10Å to about 2000Å (in total distributed on all loaded wafers) | ||
|10Å to about 1000 nm | |10Å to about 1000 nm | ||
|10Å to at least 1000 Å | |10Å to at least 1000 Å | ||
Line 53: | Line 50: | ||
! Deposition rate | ! Deposition rate | ||
|From 0.4 Å/s up to about ~2Å/s | |From 0.4 Å/s up to about ~2Å/s | ||
|From 1 Å/s up to 5 Å/s | |From 1 Å/s up to 5 Å/s | ||
|Depends on deposition parameters | |Depends on deposition parameters | ||
Line 66: | Line 62: | ||
*6x 6" wafers or | *6x 6" wafers or | ||
Many small pieces | Many small pieces | ||
| | | | ||
*Up to 4 x 6" wafer or | *Up to 4 x 6" wafer or | ||
Line 90: | Line 82: | ||
! Allowed substrates | ! Allowed substrates | ||
| | | | ||
* | *Almost any that does not degas. See also the cross-contamination sheet | ||
| | | | ||
* | *Almost any that does not degas. See also the cross-contamination sheet | ||
| | | | ||
Line 120: | Line 102: | ||
* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | | | ||
*Silicon oxide | *Silicon oxide | ||
Line 141: | Line 117: | ||
! Comment | ! Comment | ||
|Recommended for unexposed e-beam resist | |Recommended for unexposed e-beam resist | ||
| | | | ||
| | | | ||
| | | | ||
|} | |} |
Revision as of 14:58, 6 June 2023
Feedback to this page: click here
All text by DTU Nanolab staff
Deposition of Germanium
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Thermal deposition
Ge deposition equipment comparison
Thermal evaporation (Wordentec) | E-beam evaporation (Temescal) | Sputtering (Lesker) | Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
---|---|---|---|---|
General description | Thermal deposition of Ge | E-beam deposition of Ge | Sputter deposition of Ge | Sputter deposition of Ge |
Pre-clean | ||||
Ar ion beam clean | RF Ar clean | RF Ar clean | ||
Layer thickness | 10Å to about 2000Å (in total distributed on all loaded wafers) | 10Å to about 1000 nm | 10Å to at least 1000 Å | 10Å to ? |
Deposition rate | From 0.4 Å/s up to about ~2Å/s | From 1 Å/s up to 5 Å/s | Depends on deposition parameters | Depends on deposition parameters |
Batch size |
Many small pieces |
|
smaller pieces |
|
Allowed substrates |
|
|
|
|
Allowed materials |
|
|
|
|
Comment | Recommended for unexposed e-beam resist |