Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2: Difference between revisions
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* [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/AlN deposition using ALD2/Acceptance_test_AlN|<b>results from the acceptance test (old material) </b>]]. | * [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/AlN deposition using ALD2/Acceptance_test_AlN|<b>results from the acceptance test (old material) </b>]]. | ||
=Deposition of AlN using TMA and NH3 plasma= | |||
==Spectroscopic ellipsometry== | |||
==X-ray photoelectron spectroscopy== |
Revision as of 16:28, 9 June 2020
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General Information
The AlN process should never run above 350 °C due to the decomposition of the trimethylaluminium. As already mentioned in the general ALD2 (PEALD) page oxides and nitrides cannot be deposited at the same time. Since the aluminium nitride requires the plasma source we only run all nitride processes without the thermal lid. Hence the chamber volume is bigger than with the thermal lid which causes that the substrate temperature is around 50 °C lower than the setpoint.