Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions
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|'''Chemical solution''' | |'''Chemical solution''' | ||
|98% Sulfuric acid and Ammonium sulfate | |98% Sulfuric acid and Ammonium sulfate | ||
|98% Sulfuric acid and Hydrogen peroxide 4:1 add H< | |98% Sulfuric acid and Hydrogen peroxide 4:1 add H<sub>2</sub>O<sub>2</sub> to H<sub>2</sub>SO<sub>4</sub> | ||
|- | |- | ||
|'''Process temperature''' | |'''Process temperature''' |
Revision as of 07:00, 19 October 2012
Cleaning of wafers or masks
Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fume hood in a beaker "Piranha" Both 7-up and Piranha removes heavy organics. Always use one of these after KOH to remove alkali ions before further processing. 7-up and Piranha are also used as cleaning solutions after stripping resist.
Comparing data for "7-up" and Piranha
"7-up" | Piranha | |
---|---|---|
General description |
Cleaning of wafers or masks using the dedicated tanks. There are one tank for masks and glass wafers and one for 4-6" Si wafers in cleanroom 4 and one tank in cleanroom 3 for 4" Si wafers only. |
Cleaning of wafers using a beaker in the fumehood in cleanroom 2. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the 7-up for wafers. |
Chemical solution | 98% Sulfuric acid and Ammonium sulfate | 98% Sulfuric acid and Hydrogen peroxide 4:1 add H2O2 to H2SO4 |
Process temperature | 80 oC | ~70 oC the chemicals will heat up to working temperature during mixing, therefore be careful!First ad H2SO4 then H2O2 |
Process time |
10 min. |
10 min. |
Allowed materials |
Dependent on which bath is used, look at the text in the pictures. |
All materials (in beaker). |
Batch size |
1-19/25 4" wafers or 4 masks at a time |
1-5 4" wafer at a time |
Size of substrate |
4-6" wafers |
2-4" wafers |