Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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|1-10 Å/s
|1-10 Å/s
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~ 10-250 Å/s
|~ 10-250 Å/s



Revision as of 16:11, 21 April 2020

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Nickel deposition

Nickel can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) E-beam evaporation (Physimeca) Sputter deposition (Lesker) Sputter deposition (Cluster-based sputter system) Electroplating (Electroplating-Ni)
General description E-beam deposition of Nickel E-beam deposition of Nickel E-beam deposition of Nickel Sputter deposition of Nickel Sputter deposition of Nickel Electroplating of Nickel
Pre-clean Ar ion bombardment RF Ar clean RF Ar clean RF Ar clean None
Layer thickness 10 Å to 1 µm * 10 Å to 1 µm * 10 Å to 2000 Å 10 Å to 5000 Å ** 10 Å to 5000 Å ** ~ 20 µm to ~ 1000 µm
Deposition rate 2-10 Å/s 10-15 Å/s 1-10 Å/s Depends on process parameters, about 1 Å/s Depends on process parameters, at least ~ 4 Å/s, see conditions here ~ 10-250 Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
  • 1x2" wafer or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • Metals
  • Almost any that do not outgas. Check the cross-contamination sheets in Labmanager.

Base materials:

  • Silicon
  • Polymers with Tg > 75°C
  • Metals (bulk)
  • Cross-linked or hard baked resists supported by one of the above mentioned materials

Seed metals:

  • NiV (75 - 100 nm recommended)
  • Ti (~5 nm) + Au (75-100 nm recommended)
  • Cr (~5 nm) + Au (75-100 nm recommended)
  • TiW
  • Cr
Comment
  • May use high-strength magnet for deposition.
  • May use high-strength magnet for deposition
  • Sample must be compatible with plating bath (pH = 3,65 and T = 52°C). Seed metal necessary.

* To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine


** To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine