Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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m →Nickel deposition: added link w info on deposition rate |
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|1-10 Å/s | |1-10 Å/s | ||
|Depends on process parameters, about 1 Å/s | |Depends on process parameters, about 1 Å/s | ||
|Depends on process parameters | |Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | ||
|~ 10-250 Å/s | |~ 10-250 Å/s | ||
Revision as of 16:11, 21 April 2020
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Nickel deposition
Nickel can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Lesker) | Sputter deposition (Cluster-based sputter system) | Electroplating (Electroplating-Ni) | |
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General description | E-beam deposition of Nickel | E-beam deposition of Nickel | E-beam deposition of Nickel | Sputter deposition of Nickel | Sputter deposition of Nickel | Electroplating of Nickel |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | RF Ar clean | None | |
Layer thickness | 10 Å to 1 µm * | 10 Å to 1 µm * | 10 Å to 2000 Å | 10 Å to 5000 Å ** | 10 Å to 5000 Å ** | ~ 20 µm to ~ 1000 µm |
Deposition rate | 2-10 Å/s | 10-15 Å/s | 1-10 Å/s | Depends on process parameters, about 1 Å/s | Depends on process parameters, at least ~ 4 Å/s, see conditions here | ~ 10-250 Å/s |
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Allowed materials |
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Base materials:
Seed metals:
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Comment |
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* To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine
** To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine