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Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride (PC3)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
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*Atomic Layer Deposition
*Atomic Layer Deposition
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*Sputtering
*Reactive sputtering
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
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*Reactive sputtering
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*TiN
*TiN
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*TiN (can be tuned)
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*TiN (can be tuned)
*TiN (can be tuned)
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!Film Thickness
!Film Thickness
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* 0nm - 50nm
* 0 nm - 50 nm
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* 0nm - 200nm
* few nm - ? (hundreds of nm)
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* few nm - 200 nm
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* 0.0173 nm/cycle on a flat sample
* 0.0173 nm/cycle on a flat sample
* 0.0232 nm/cycle on a high aspect ratio structures
* 0.0232 nm/cycle on a high aspect ratio structures
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*not known, depends partly if 3" or 4" target is used. Expected to be faster than the old Sputter-System(Lesker)
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* up to 0.0625 nm/s on a flat sample
* up to 0.0625 nm/s on a flat sample
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*Very good
*Very good
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*not known yet
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*Not investigated
*Not investigated
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!Process Temperature
!Process Temperature
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* 450<sup>o</sup>C
* 450 °C
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* Up to 600 °C
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* 400<sup>o</sup>C
* Up to 400 °C
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*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafer
*1-5 150 mm wafer
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*Many small samples
*Up to 10x100 mm or 150 mm wafers
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*Several small samples
*Several small samples
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*Metals  
*Metals  
*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic.
*Almost anything that is not toxic and does not outgas
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*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic
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