Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

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*[[/Sputtering of TiW in Wordentec|Sputtering of TiW in Wordentec]]
*[[/Sputtering of TiW in Wordentec|Sputtering of TiW in Wordentec]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of TiW/Sputtering of TiW in Wordentec/Grain size and uniformity of TiW layers|Results of a study on the grain size and uniformity of TiW sputtered in the Wordentec]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of TiW/Sputtering of TiW in Wordentec/Grain size and uniformity of TiW layers|Results of a study on the grain size and uniformity of TiW sputtered in the Wordentec]]


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Revision as of 15:43, 27 March 2020

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Sputtering of TiW

Deposition of TiW alloy can be done in the Wordentec. If necessary, processes may also be developed for depositing TiW in the Lesker sputter setups (contact responsible staff for this).


Sputter deposition (Wordentec)
General description Sputter deposition of TiW
Pre-clean RF Ar clean
Layer thickness .
Deposition rate Depending on process parameters, see here.
Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comments TiW alloy: 10%/90% by weight