Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,409 edits
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,409 edits
Line 28: Line 28:
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Layer thickness
! Layer thickness
|10Å to 0.6 µm*
|10Å to 0.2 µm*
|10Å to ?
|10Å to ?
|-
|-
Line 76: Line 76:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|As of August 2018, Ta has not yet been deposited in the Temescal.
| Tantalum deposition heats the chamber*
Please contact the Thin Film group to develop a process.
|
|
|}
|}


'''*'''  ''If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.''
'''*'''  ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [[mailto:thinfilm@nanolab.dtu.dk Thin film group]].''

Revision as of 11:26, 25 March 2020

Feedback to this page: click here

Tantalum deposition

Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Temescal) Sputter (Lesker)
General description E-beam deposition of Ta

(line-of-sight deposition)

Sputter deposition of Ta

(not line-of-sight)

Pre-clean Ar ion source RF Ar clean
Layer thickness 10Å to 0.2 µm* 10Å to ?
Deposition rate 0.5Å/s to 10Å/s ~0.3Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment Tantalum deposition heats the chamber*

* The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [Thin film group].

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum&oldid=34949"