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| | TiW alloy: 10%/90% by weight | | | TiW alloy: 10%/90% by weight |
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| ==Deposited rates==
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| Depening on the settings (pressure and effect) during the sputtering process, the roughness and grain size of the deposited layer can be different. The deposition rate will also change with different settings, as seen below.
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| '''Pressure <math>1*10^{-3}</math> mbar, Effect 150 W'''
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| The rate is established to be '''0.9 '''Å/s (in the center of the 4" wafer, 0.7 Å/s at the edge).
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| This corresponds to a deposition time of '''1 minute 55 seconds''' for deposition of '''10 nm'''.
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| '''Pressure <math>1*10^{-2}</math> mbar, Effect 150 W'''
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| The rate is established to be '''1.3 '''Å/s (in the center of the 4" wafer, 1.0 Å/s at the edge).
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| This corresponds to a deposition time of '''1 min 16 seconds''' for deposition of '''10 nm'''.
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| '''Pressure <math>1*10^{-2}</math> mbar, Effect 300 W'''
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| The rate is established to be '''2.2 '''Å/s (in the center of the 4" wafer, 1.8 Å/s at the edge).
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| This corresponds to a deposition time of '''45 seconds''' for deposition of '''10 nm'''.
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| '''Pressure <math>5*10^{-2}</math> mbar, Effect 150 W'''
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| The rate is established to be '''1.3''' Å/s (in the center of the 4" wafer, 1.0 Å/s at the edge).
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| This corresponds to a deposition time of '''1 minute 15 seconds''' for deposition of '''10 nm'''.
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| '''Pressure <math>5*10^{-2}</math> mbar, Effect 250 W'''
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| The rate is established to be '''2.4''' Å/s (in the center of the 4" wafer, 1.6 Å/s at the edge).
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| This corresponds to a deposition time of '''42 seconds''' for deposition of '''10 nm'''.
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| ''Deposition rates measured August-September 2008, KNIL.''
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