Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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== Deposition of Germanium == | == Deposition of Germanium == | ||
Germanium can be deposited by thermal evaporation | Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering. | ||
==Thermal deposition== | ==Thermal deposition== | ||
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | |||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]]) | |||
|- | |- | ||
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|E-beam deposition of Ge | |E-beam deposition of Ge | ||
|E-beam deposition of Ge | |E-beam deposition of Ge | ||
|Sputter deposition of Ge | |||
|Sputter deposition of Ge | |||
|- | |- | ||
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| - | | - | ||
|Ar ion beam clean | |Ar ion beam clean | ||
|RF Ar clean | |||
|RF Ar clean | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about 1000 nm | |10Å to about 1000 nm | ||
|10Å to at least 1000 Å | |||
|10Å to ? | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|5 Å/s | |5 Å/s | ||
|From 1 Å/s up to 5 Å/s | |From 1 Å/s up to 5 Å/s | ||
|Depends on deposition parameters | |||
|Depends on deposition parameters | |||
|- | |- | ||
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*3x 8" wafers (ask for special holder) | *3x 8" wafers (ask for special holder) | ||
*Many smaller pieces | *Many smaller pieces | ||
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*1x6" wafer or | |||
*1x4" wafer or | |||
smaller pieces | |||
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*10x6" or 4" wafers | |||
*many smaller pieces | |||
|- | |- | ||
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*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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*Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet | |||
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*Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheets | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*Metals | *Metals | ||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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*Almost any as above | |||
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*Almost any as above | |||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Comment | ! Comment | ||
|Recommended for unexposed e-beam resist | |Recommended for unexposed e-beam resist | ||
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Revision as of 14:17, 20 April 2020
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Deposition of Germanium
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Thermal deposition
Ge deposition equipment comparison
Thermal evaporation (Wordentec) | E-beam evaporation (Physimeca) | E-beam evaporation (Temescal) | Sputtering (Lesker) | Sputtering (Cluster-based sputter system) | |
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General description | Thermal deposition of Ge | E-beam deposition of Ge | E-beam deposition of Ge | Sputter deposition of Ge | Sputter deposition of Ge |
Pre-clean | RF Ar clean | - | Ar ion beam clean | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to about 2000Å (in total distributed on all loaded wafers) | 10Å to about 3000Å | 10Å to about 1000 nm | 10Å to at least 1000 Å | 10Å to ? |
Deposition rate | From 0.4 Å/s up to about ~2Å/s | 5 Å/s | From 1 Å/s up to 5 Å/s | Depends on deposition parameters | Depends on deposition parameters |
Batch size |
Many small pieces |
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smaller pieces |
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Allowed substrates |
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Allowed materials |
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Comment | Recommended for unexposed e-beam resist |