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Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions

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* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]  
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]  


 
==Comparison of deposition equipment for silver==
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
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! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information
|Cluster-based sputter system]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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| Thermal deposition of Ag
| Thermal deposition of Ag
| E-beam deposition of Ag
| E-beam deposition of Ag
| Sputter deposition of Ag
| Sputter deposition of Ag
| Sputter deposition of Ag
| Sputter deposition of Ag
| Sputter deposition of Ag
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| RF Ar clean  
| RF Ar clean  
| none
| none
| RF Ar clean
| RF Ar clean  
| RF Ar clean  
| RF Ar clean  
| RF Ar clean  
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|10Å to 2000Å  
|10Å to 2000Å  
|10Å to about 3000Å  
|10Å to about 3000Å  
|10Å to about 1000Å
|10Å to about 2000Å
|10Å to ?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|1 to 10Å/s
|1 to 10Å/s
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Dependent on process parameters.
|Dependent on process parameters.
|Dependent on process parameters.
|-
|-
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*1x4" wafers or
*1x4" wafers or
*smaller pieces
*smaller pieces
|
*up to 10x6" wafers or
*up to 10x4" wafers or
*many smaller pieces


|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
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* SU-8  
* SU-8  
* Metals  
* Metals  
 
|
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
| Pumpdown approx 20 min. Possible to tilt the wafer.
| Pumpdown approx 20 min. Possible to tilt the wafer.
| Pumpdown approx 10 min.
| Pumpdown approx 15 min.
| Only very thin layers. Pumpdown approx 1 hour.
| Only very thin layers. Pumpdown approx 1 hour.
|
|
|
|
|
|
|Load and transfer approx. 12 minutes
|-
|-
|}
|}