Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]] | * [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]] | ||
==Comparison of deposition equipment for silver== | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
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! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information | |||
|Cluster-based sputter system]]) | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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| Thermal deposition of Ag | | Thermal deposition of Ag | ||
| E-beam deposition of Ag | | E-beam deposition of Ag | ||
| Sputter deposition of Ag | |||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
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| RF Ar clean | | RF Ar clean | ||
| none | | none | ||
| RF Ar clean | |||
| RF Ar clean | | RF Ar clean | ||
| RF Ar clean | | RF Ar clean | ||
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|10Å to 2000Å | |10Å to 2000Å | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about | |10Å to about 2000Å | ||
|10Å to ? | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|1 to 10Å/s | |1 to 10Å/s | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
|Dependent on process parameters. | |||
|Dependent on process parameters. | |Dependent on process parameters. | ||
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*1x4" wafers or | *1x4" wafers or | ||
*smaller pieces | *smaller pieces | ||
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*up to 10x6" wafers or | |||
*up to 10x4" wafers or | |||
*many smaller pieces | |||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
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*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | |||
|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
! Comment | ! Comment | ||
| Pumpdown approx 20 min. Possible to tilt the wafer. | | Pumpdown approx 20 min. Possible to tilt the wafer. | ||
| Pumpdown approx | | Pumpdown approx 15 min. | ||
| Only very thin layers. Pumpdown approx 1 hour. | | Only very thin layers. Pumpdown approx 1 hour. | ||
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|Load and transfer approx. 12 minutes | |||
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Revision as of 11:41, 20 April 2020
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Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
Thermal deposition of Silver
Comparison of deposition equipment for silver
| E-beam evaporation (Temescal) | Thermal evaporation (Thermal Evaporator) | Thermal evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information | Cluster-based sputter system]]) | |
|---|---|---|---|---|---|---|---|---|
| General description | E-beam deposition of Ag | Thermal deposition of Ag | Thermal deposition of Ag | E-beam deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | |
| Pre-clean | Ar ion beam bombardment | none | RF Ar clean | none | RF Ar clean | RF Ar clean | RF Ar clean | |
| Layer thickness | 10Å to 1µm* | 10Å to 0.5µm ** | 10Å to 0.5µm **(0.5µm not on all wafers) | 10Å to 2000Å | 10Å to about 3000Å | 10Å to about 2000Å | 10Å to ? | |
| Deposition rate | 1 to 10Å/s | 5Å/s | 1 to 10Å/s | 1 to 10Å/s | Depending on process parameters (also written in the logbook). | Dependent on process parameters. | Dependent on process parameters. | |
| Batch size |
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very bad uniformity above 4" wafers |
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| Allowed materials |
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| Comment | Pumpdown approx 20 min. Possible to tilt the wafer. | Pumpdown approx 15 min. | Only very thin layers. Pumpdown approx 1 hour. | Load and transfer approx. 12 minutes |
* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk
** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk
*** Please ask responsible staff for 8" wafer holder