Template:SEM comparison table 314: Difference between revisions

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! Equipment
! Equipment
<!-- ![[Specific Process Knowledge/Characterization/SEM Inspect S|SEM Inspect S]] -->
<!-- ![[Specific Process Knowledge/Characterization/SEM Inspect S|SEM Inspect S]] -->
![[Specific Process Knowledge/Characterization/SEM FEI Nova 600 NanoSEM|SEM FEI Nova 600 NanoSEM]]
![[LabAdviser/314/SEM/Nova|Nova]]
![[Specific Process Knowledge/Characterization/SEM FEI Quanta 200 ESEM FEG|SEM FEI QFEG 200 Cryo ESEM]]
![[LabAdviser/314/SEM/QFEG|QFEG]]
<!-- ![[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FIB-SEM FEI QUANTA 200 3D]] -->
![[LabAdviser/314/SEM/AFEG|AFEG]]
![[Specific Process Knowledge/Characterization/Dual Beam FEI Helios Nanolab 600|Dual Beam FEI Helios Nanolab 600]]
![[LabAdviser/314/FIB/Helios|Helios]]
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|-


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*Cryogenic sample fixing/stabilization using cryo stage
*Cryogenic sample fixing/stabilization using cryo stage
*X Ray Analysis with EDS
*X Ray Analysis with EDS
<!-- |
|
*Conductive samples in High Vac
*Conductive samples in High Vac
*Charge reduction in Low Vac
*Charge reduction in Low Vac
*Micro and Nano milling/fabrication using various gases and FIB -->
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*Conductive samples in High Vac
*Conductive samples in High Vac
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!Equipment position
!Equipment position
<!-- |CEN Building 314 -->
<!-- |CEN Building 314 -->
|CEN Building 314
|Building 314 Room 060
|CEN Building 314
|Building 314 Room 011
<!-- |CEN Building 307 Room 111 -->
|Building 314 Room 034
|CEN Building 314
|Building 314 Room 061
|-
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* Extended vacuum mode (ESEM)  
* Extended vacuum mode (ESEM)  
•1.4 nm at 30 kV (SE)
•1.4 nm at 30 kV (SE)
<!-- |
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* Electron Column
* High vacuum
•5nm @30kV
• 0.8 nm at 30 kV (STEM)
* Ion Column
• 1.0 nm at 30 kV (SE)
•7nm @ 30kV -->
• 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)
*High vacuum with beam deceleration option
• 3.0 nm at 1 kV (BD mode + BSE)
 
* Low vacuum - 1.4 nm at 30 kV (SE)
•2.5 nm at 30 kV (BSE)
•3.0 nm at 3 kV (SE)
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* Electron Column
* Electron Column
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*EDS X Ray by energy
*EDS X Ray by energy
*STEM Scanning Transmission Electron Microscopy
*STEM Scanning Transmission Electron Microscopy
<!-- |  
|  
*ETD Secondary Electrons
*ETD Secondary Electrons
*BSED Back Scatter Electrons
*BSED Back Scatter Electrons  
*LVD/LFD Low Vac SE
*LVD/LFD Low Vac SE  
*GSED ESEM SE
*EDS X Ray by energy
*STEM Scanning Transmission Electron Microscopy
*STEM Scanning Transmission Electron Microscopy
*GAD Low VAC BSED
*GSED ESEM SE -->
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*ETD/TLD Secondary Electrons
*ETD/TLD Secondary Electrons
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* R 360⁰
* R 360⁰
* T 70⁰ Manual
* T 70⁰ Manual
<!-- |
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* X 100mm
* X 50mm
* Y 100mm
* Y 50mm
* Z 50mm
* Z 50mm
* R 360⁰
* R 360⁰
* T 70⁰ -->
* T 70⁰ Manua
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* X 150mm Piezo
* X 150mm Piezo
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| B
| B
| C
| C
<!-- | D -->
| D
| E
| E
|-
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Revision as of 11:27, 24 March 2020

Equipment Nova QFEG AFEG Helios
Purpose
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • X Ray Analysis with EDS
  • Crystallographic analysis using EBSD and both On and Off axis TKD
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • Environmental control using Peltier stage
  • Cryogenic sample fixing/stabilization using cryo stage
  • X Ray Analysis with EDS
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • Conductive samples in High Vac
  • Micro and Nano milling/fabrication using various gases and FIB
  • X Ray Analysis with EDS
  • Crystallographic analysis using EBSD and Off Axis TKD
Equipment position Building 314 Room 060 Building 314 Room 011 Building 314 Room 034 Building 314 Room 061
Resolution The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon
B
  • High vacuum

• 0.8 nm at 30 kV (STEM) • 1.0 nm at 30 kV (SE) • 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)

  • High vacuum with beam deceleration option

• 3.0 nm at 1 kV (BD mode + BSE)

  • Low vacuum - 1.4 nm at 30 kV (SE)

•2.5 nm at 30 kV (BSE) •3.0 nm at 3 kV (SE)

  • Extended vacuum mode (ESEM)

•1.4 nm at 30 kV (SE)

  • High vacuum

• 0.8 nm at 30 kV (STEM) • 1.0 nm at 30 kV (SE) • 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)

  • High vacuum with beam deceleration option

• 3.0 nm at 1 kV (BD mode + BSE)

  • Low vacuum - 1.4 nm at 30 kV (SE)

•2.5 nm at 30 kV (BSE) •3.0 nm at 3 kV (SE)

  • Electron Column

•0.8nm @15kV •0.9nm @1kV

  • Ion Column

•4.5nm @ 30kV

Detectors
  • ETD/TLD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • Helix Low Vac SE
  • EDS X Ray by energy
  • EBSD Electron Back Scatter Diffraction
  • TKD Transmission Kikuchi Diffraction
  • STEM Scanning Transmission Electron Microscopy
  • GAD Low Vac BSED
  • ETD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • GSED ESEM SE
  • EDS X Ray by energy
  • STEM Scanning Transmission Electron Microscopy
  • ETD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • GSED ESEM SE
  • EDS X Ray by energy
  • STEM Scanning Transmission Electron Microscopy
  • ETD/TLD Secondary Electrons
  • ABS Annular BSED
  • EDS X Ray by energy
  • EBSD Electron Back Scatter Diffraction
  • CDEM Continuos Dinode Electron Multiplier
Stage specifications
  • X 150mm Piezo
  • Y 150mm Piezo
  • Z 10mm
  • R 360⁰ Piezo
  • T 70⁰
  • X 50mm
  • Y 50mm
  • Z 50mm
  • R 360⁰
  • T 70⁰ Manual
  • X 50mm
  • Y 50mm
  • Z 50mm
  • R 360⁰
  • T 70⁰ Manua
  • X 150mm Piezo
  • Y 150mm Piezo
  • Z 10mm
  • R 360⁰ Piezo
  • T 70⁰
Options B C D E
Max sample size Consult with DTU Nanolab staff as weight, dimensions, pumping capacity and technique all play a roll in the sample size