Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD new page: Difference between revisions
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(Created page with "=HfO<sub>2</sub> standard recipe= ==HfO<sub>2</sub> deposition using TEMAHf and H<sub>2</sub>O precursors== <!-- 20170424A --> The following tables show the recipe and boos...") |
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The ALD window for deposition of hafnium oxide (HfO<sub>2</sub>) ranges from 150 oC to 350 oC. XPS measurements shows that at temperatures below 150 oC the Al2O3 layer will be contaminated by unreacted TMA molecules, and at temperatures above 350 oC the TMA decomposes. | |||
All results shown on this page have been obtained using the "AL2O3" recipe on new Si(100) wafers with native oxide. | |||
=HfO<sub>2</sub> standard recipe= | =HfO<sub>2</sub> standard recipe= | ||
Revision as of 11:16, 12 March 2019
The ALD window for deposition of hafnium oxide (HfO2) ranges from 150 oC to 350 oC. XPS measurements shows that at temperatures below 150 oC the Al2O3 layer will be contaminated by unreacted TMA molecules, and at temperatures above 350 oC the TMA decomposes. All results shown on this page have been obtained using the "AL2O3" recipe on new Si(100) wafers with native oxide.
HfO2 standard recipe
HfO2 deposition using TEMAHf and H2O precursors
The following tables show the recipe and boost settings for the TEMAHf precursor:
TEMAHf | H2O | |
---|---|---|
Nitrogen flow | 150 sccm | 120 sccm |
Pulse time | 1.6 s | 0.1 s |
Purge time | 8.0 s | 4.0 s |
Boost flow | 500 sccm |
---|---|
Pre-empty | 0.5 s |
Master fill | 1.2 s |
Post-empty | 0 s |