Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

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Germanium can be deposited by thermal evaporation and e-beam evaporation.

	Thermal evaporation (Wordentec)	E-beam evaporation (Physimeca)	E-beam evaporation (Temescal)
General description	Thermal deposition of Ge	E-beam deposition of Ge	E-beam deposition of Ge
Pre-clean	RF Ar clean	-	Ar ion beam clean
Layer thickness	10Å to about 2000Å (in total distributed on all loaded wafers)	10Å to about 3000Å	10Å to about 1000 nm
Deposition rate	From 0.4 Å/s up to about ~2Å/s	5 Å/s	From 1 Å/s up to 5 Å/s
Batch size	24x 2" wafers or 6x 4" wafers or 6x 6" wafers or Many small pieces	1x 2" wafer or 1x 4" wafers or Several smaller pieces	Up to 4 x 6" wafer or 3x 8" wafers (ask for special holder) Many smaller pieces
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers	III-V materials Silicon wafers Quartz wafers Pyrex wafers	Silicon wafers Quartz wafers Pyrex wafers See also the cross-contamination sheet
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet
Comment	Recommended for unexposed e-beam resist

@@ Line 40: / Line 40: @@
 |10Å to about 2000Å (in total distributed on all loaded wafers)
 |10Å to about 3000Å
-|10Å to about 5000Å
+|10Å to about 1000 nm
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
 |From 0.4 Å/s up to about ~2Å/s
-|From 5 Å/s up to 10 Å/s
+|5 Å/s
 |From 1 Å/s up to 5 Å/s
 |-