Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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Base materials:<br> | Base materials:<br> | ||
*Silicon | *Silicon | ||
*Polymers with Tg > | *Polymers with Tg > 75°C | ||
*Cross-linked or hard baked resists supported by one of the above | *Metals (bulk) | ||
*Cross-linked or hard baked resists supported by one of the above mentioned materials | |||
Seed metals:<br> | Seed metals:<br> | ||
* NiV (75 - 100 nm recommended) | * NiV (75 - 100 nm recommended) |
Revision as of 11:57, 9 May 2019
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Nickel deposition
Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Lesker) | Electroplating (Electroplating-Ni) | |
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General description | E-beam deposition of Nickel | E-beam deposition of Nickel | E-beam deposition of Nickel | Sputter deposition of Nickel | Electroplating of Nickel |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | None | |
Layer thickness | 10Å to 1 µm* | 10Å to 1 µm* | 10Å to 2000 Å | 10Å to 2000 Å | A few µm to ~1000 µm |
Deposition rate | 2Å/s to 10Å/s | 10Å/s to 15Å/s | 1 to 10Å/s | Depends on process parameters. About 1 Å/s | About 10 Å/s to 250 Å/s |
Batch size |
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Allowed materials |
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Base materials:
Seed metals:
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Comment | Thicknesses above 2000 Å requires special permission |
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Sample must be compatible with plating bath. Seed metal necessary. |
* To deposit layers thicker than 600 nanometers permission is required from metal@danchip.dtu.dk to ensure enough material is present in the machine