Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano

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Etching of nanostructures in silicon

A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are:

Substrates

A pattern containing 30 nm, 60 nm, 90 nm, 120 nm and 150 nm wide lines has been transferred using E-beam lithography onto three separate batches of 2" wafers (with three different thicknesses of zep resist). In order to make sure that the narrowest features are fully opened they are intentionally over-exposed in the E-beam writer (400 muC/cm2) causing the lines to widen. The resist profiles of the three batches are:

• The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)
• The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)
• The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)

The exposed area is very small. The 211 nm batch has the same lines distributed in a different way that allows you monitor the progress of the etch in three different durations by cleaving off a piece of the wafer 3 times. After E-beam exposure the wafers have been developed: N50 for 2 minutes followed by 30 seconds of IPA.

Substrate mounting

The 2" wafers are mounted with crystalbond in the center of 4" Si carriers that have an oxide layer facing the plasma.

Conditioning the process chamber

Recipe Sinano	3.0	3.1	3.2	3.3	3.4	4.0	3.5	3.6	3.3	3.7	3.31	3.31	3.32
Cl2 (sccm)	0	0	0	0	0	20	15	15	0	0	0	0	0
BCl3 (sccm)	5	3	5	5	5	0	5	5	5	5	5	5	5
HBr (sccm)	15	17	15	15	15	0	0	0	15	15	15	15	15
Coil power (W)	900 L	900 F	900 F	900 F	900 F	900 L	900 L	900 F	900 F	900 L	900 F	900 F	900 F
Platen power (W)	50	50	60	75	90	60	60	60	75	60	75	75	30
Pressure (mtorr)	2	2	2	2	2	2	5	10	2	10	2	2	2
Temperature (oC)	20	20	20	20	20	20	20	20	20	50	50	50	50
Spacers (mm)	100	100	100	100	100	100	100	100	100	100	100	30	100
Process time (s)	150	180	120	180	120	90	120	180	300	180	180	180	180
Etch rates (nm/min)
Averages	311	104	92	105	116	169	108	79	101	66	91	98	59
Std. Dev	44	15	15	21	22	9	11	31	29	4	28	18	12
Zep etch rate (nm/min)
		30	40	51	67			45	59		53	36	19
Sidewall angle (degrees)
Averages	82	82	82	82	82	84	81	83	83	85	80	83	79
Std. Dev	2	2	1	1	1	1	1	2	2	1	3	2	2
CD loss (nm pr edge)
Averages	65	-11	-15	-2	-11	67	63	-29	-5	-29	10	-14	-17
Std. Dev	30	5	2	4	3	29	27	6	5	8	7	8	10
Bowing (nm)
Averages	31	31	15	6	5	22	12	15	28	13	25	1	-2
Std. Dev	6	7	3	6	4	5	2	6	9	7	5	2	2
Bottom curvature
Averages	-9	-6	-9	-11	-9	9	-4	-8	-24	-2	-9	-13	-10
Std. Dev	22	19	19	11	7	17	15	15	12	15	13	17	18

• Nanoetch on DRIE-Pegasus
• 1 - the first nanoetch