Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE: Difference between revisions
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=Development work: SiO2 etch with resist mask, sample on carrier (Si carrier)= | |||
==SiO2 etch with resist mask, sample on carrier (Si carrier) in the ICP mode using C4F8/H2 chemistry== | |||
''By Berit Herstrøm @danchip, January-Marts 2018'' | ''By Berit Herstrøm @danchip, January-Marts 2018'' | ||
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Development work: SiO2 etch with resist mask, sample on carrier (Si carrier)
SiO2 etch with resist mask, sample on carrier (Si carrier) in the ICP mode using C4F8/H2 chemistry
By Berit Herstrøm @danchip, January-Marts 2018
The challenge was to develop a SiO2 etching recipe that can be used for samples on a carrier. Samples that cannot be clamped and cooled. The goal was to keep a good selectivity to the resist mask and get a vertical sidewall, without getting a lot of redeposition on the sidewalls. The testing regime was using both the coil power and the platen power with C4F8/H2 chemistry.
Take a look at development flow and the results here: Media:ASE SiO2 etch on carrier ICP C4F8 H2 no He rev02.pdf . Zoom in to read and see the images: (Ctrl + "+")
The recommended recipe for SiO2 etch using a carrier is this
Parameter | Recipe name: 1SiO2_02 |
---|---|
Coil Power [W] | 150 |
Platen Power [W] | 25 |
Platen temperature [oC] | 20 |
C4F8 flow [sccm] | 36 |
H2 flow [sccm] | 13 |
Pressure [mTorr] | 2.5 |
Results for 1SiO2_02 on a piece of wafer on a Si carrier
Material to be etched | Etch rate using SiO2_res |
---|---|
Etch rate in SiO2 | 22.1 nm/min |
Etch rate in resist (MIR) | 12.5 nm/min |
Selectivity (SiO2:resist) | 1.8 |
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