Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride

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Deposition of Aluminium Nitride

AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. AlN film can be deposited by using the Lesker Sputter System or the ALD2.

Comparison of the methods for deposition of Silicon Oxide

	Sputter System Lesker	![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]
Generel description	Reactive Sputtering ( 2" Al target)	Plasma Enhanced Atomic Layer Deposition
Stoichiometry	Not tested	AlN
Film Thickness	0nm - 200nm	0nm - 50nm
Deposition rate	Not tested	0.0625 nm/cycle on a flat sample 0.0558 nm/cycle on a high aspect ratio structures
Step coverage	Very good	Very good
Process Temperature	Up to 600oC	350oC
Substrate size	chips 1x 100 mm wafer 1x 150 mm wafer	Several small samples 1 50 mm wafers 1 100 mm wafers 1 150 mm wafer
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Photoresist PMMA Mylar SU-8 Any metals	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al2O3 Ti, TiO2 Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)

Further process information can be found here:

• AlN deposition using ALD2
• For AlN deposition using the Lesker please contact the Thinfilm group.