Specific Process Knowledge/Bonding/Eutectic bonding: Difference between revisions

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Eutectic Bonding

Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390^oC). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature

Eutecticum	Eutectic temperature	Bonding temperature in Wafer Bonder 02
AuSi	365^oC	390^oC
AuSn	<300^oC	300^oC
AuSnNi	.	.

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	==Eutectic Bonding==		==Eutectic Bonding==

	Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature.		Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutectica have a different eutectic (bonding) temperature