Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | |||
|- | |- | ||
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! General description | ! General description | ||
|Thermal deposition of Ge | |Thermal deposition of Ge | ||
|E-beam deposition of Ge | |||
|E-beam deposition of Ge | |E-beam deposition of Ge | ||
|- | |- | ||
| Line 30: | Line 32: | ||
|RF Ar clean | |RF Ar clean | ||
| - | | - | ||
|Ar ion beam clean | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to about 2000Å | |10Å to about 2000Å (in total distributed on all loaded wafers) | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about 5000Å | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|From 0.4 Å/s up to about ~2Å/s | |From 0.4 Å/s up to about ~2Å/s | ||
|From 5 Å/s up to 10/s | |From 5 Å/s up to 10 Å/s | ||
|From 1 Å/s up to 5 Å/s | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*24x 2" wafers or | *24x 2" wafers or | ||
*6x 4" wafers or | *6x 4" wafers or | ||
*6x 6" wafers | *6x 6" wafers or | ||
Many small pieces | |||
| | | | ||
*1x 2" wafer or | *1x 2" wafer or | ||
*1x 4" wafers or | *1x 4" wafers or | ||
*Several smaller pieces | *Several smaller pieces | ||
| | |||
*Up to 4 x 6" wafer or | |||
*3x 8" wafers (ask for special holder) | |||
*Many smaller pieces | |||
|- | |- | ||
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* PMMA | * PMMA | ||
* Mylar | * Mylar | ||
| | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Photoresist | |||
*PMMA | |||
*Mylar | |||
*Metals | |||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | |||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Comment | ! Comment | ||
|Recommended for unexposed e-beam resist | |Recommended for unexposed e-beam resist | ||
| | | | ||
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|} | |} | ||
Revision as of 11:32, 19 December 2018
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Deposition of Germanium
Germanium can be deposited by thermal evaporation and e-beam evaporation.
Thermal deposition
| Thermal evaporation (Wordentec) | E-beam evaporation (Physimeca) | E-beam evaporation (Temescal) | |
|---|---|---|---|
| General description | Thermal deposition of Ge | E-beam deposition of Ge | E-beam deposition of Ge |
| Pre-clean | RF Ar clean | - | Ar ion beam clean |
| Layer thickness | 10Å to about 2000Å (in total distributed on all loaded wafers) | 10Å to about 3000Å | 10Å to about 5000Å |
| Deposition rate | From 0.4 Å/s up to about ~2Å/s | From 5 Å/s up to 10 Å/s | From 1 Å/s up to 5 Å/s |
| Batch size |
Many small pieces |
|
|
| Allowed substrates |
|
| |
| Allowed materials |
|
|
|
| Comment | Recommended for unexposed e-beam resist |