Revision as of 12:15, 20 March 2017

Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTION

AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.

	Sputtering deposition (Lesker)	Atomic layer deposition (ALD Picosun R200)
General description	Sputter deposition of AZO	Atomic layer deposition of AZO
Pre-clean	RF Ar clean
Layer thickness	10Å to 5000Å*	0 to 1000 Å
Deposition rate	Depending on process parameters.	Depending on temperature
Batch size	Pieces or 1x4" wafer or 1x6" wafer	Pieces or 1x4" wafer or 1x6" wafer or 1x8" wafer
Allowed materials	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al₂O₃ Ti, TiO₂ Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)
Comment	Use 2 inch target Substrate rotation Substrate RF Bias (optional)

* For thicknesses above 200 nm permission is required.

@@ Line 28: / Line 28: @@
 ! Layer thickness
 |10Å to 5000Å*
-|
+|0 to 1000 Å
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
 |Depending on process parameters.
-|
+|Depending on temperature
 |-
 |-style="background:WhiteSmoke; color:black"
@@ Line 42: / Line 42: @@
 *1x6" wafer
 |
-*
+*Pieces or
-*
+*1x4" wafer or
-*
+*1x6" wafer or
+*1x8" wafer
 |-