Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions

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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|Depending on process parameters.
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! Batch size
! Batch size
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*Up to 1x4" wafers
*Pieces or
*smaller pieces
*1x4" wafer or
*1x6" wafer
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*Pieces or
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*1x4" wafer or
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*1x6" wafer
*
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* Silicon  
* Silicon
* Silicon oxide  
* Silicon oxide  
* Silicon nitride
* Silicon (oxy)nitride  
* Silicon (oxy)nitride  
* Photoresist  
* Photoresist  
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* SU-8  
* SU-8  
* Metals  
* Metals  
* Carbon
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* Silicon
* Silicon

Revision as of 12:30, 30 January 2017

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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.


Sputtering deposition (Lesker) Atomic layer deposition (ALD Picosun R200)
General description Sputter deposition of AZO Atomic layer deposition of AZO
Pre-clean RF Ar clean
Layer thickness 10Å to 5000Å*
Deposition rate Depending on process parameters.
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment

* For thicknesses above 200 nm permission is required.