Specific Process Knowledge/Thin film deposition/ALD Picosun R200/AZO deposition using ALD: Difference between revisions

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{| border="2" cellspacing="2" cellpadding="9"  align="none"
|-
|
!EtZn<sub>2</sub>O
!EtZn<sub>2</sub>O
!H<sub>2</sub>O
!H<sub>2</sub>O
!TMA
!TMA
!H<sub>2</sub>O
!H<sub>2</sub>O
|-
!Nitrogen flow
|
|
|200 sccm
|200 sccm
|150 sccm
|150 sccm
|200 sccm
|200 sccm
|-
!Pulse time
|0.1 s
|0.1 s
|0.1 s
|0.1 s
|0.1 s
|0.1 s
|0.1 s
|0.1 s
|-
!Purge time
|0.5 s
|20.0 s
|0.5 s
|20.0 s
|0.5 s
|20.0 s
|0.5 s
|20.0 s
|-
!# cycles
|colspan="4" align="center"|20
|colspan="4" align="center"|1
|}

Revision as of 17:18, 9 January 2017

THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

EtZn2O EtZn2O H2O H2O TMA TMA H2O H2O
Nitrogen flow 200 sccm 200 sccm 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s
# cycles 20 1
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