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Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions

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→Thermal deposition of Silver: added temescal and thermal evaporator, removed alcatel.
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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]])
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! General description
! General description
| E-beam deposition of Ag
| E-beam deposition of Ag
| Thermal deposition of Ag
| Thermal deposition of Ag
| Thermal deposition of Ag
| E-beam deposition of Ag
| E-beam deposition of Ag
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! Pre-clean
! Pre-clean
|RF Ar clean
| Ar ion beam bombardment
|RF Ar clean  
| none
|
| RF Ar clean  
|RF Ar clean  
| none
|RF Ar clean  
| RF Ar clean  
| RF Ar clean  
| 
| 
|-
|-
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! Layer thickness
! Layer thickness
|10Å to 1µm*
|10Å to 1µm*
|10Å to 0.5µm (0.5µm not on all wafers)
|10Å to 0.5µm **
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to 2000Å  
|10Å to 2000Å  
|10Å to about 3000Å  
|10Å to about 3000Å  
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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1 to 10Å/s
|1Å/s to 10 Å/s
|5Å/s
|1 to 10Å/s
|1 to 10Å/s
|1 to 10Å/s
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! Batch size
|
*Up to 4x6" wafers or
*Up to 3x8" wafers *** or
*smaller pieces
|
|
*Up to 1x4" wafers
*Up to 1x4" wafers
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|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon  
* Silicon  
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|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
|
| Pumpdown approx 20 min
|Only very thin layers.
| Pumpdown approx 10 min
| Only very thin layers. Pumpdown approx 1 hour.
|
|
|
|
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|}
|}


'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
 
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
 
'''**'''  ''Please ask responsible staff for 8" wafer holder''
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