Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
→Thermal deposition of Silver: added temescal and thermal evaporator, removed alcatel. |
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! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | |||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
! Sputter | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | ||
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! General description | ! General description | ||
| E-beam deposition of Ag | | E-beam deposition of Ag | ||
| Thermal deposition of Ag | |||
| Thermal deposition of Ag | | Thermal deposition of Ag | ||
| E-beam deposition of Ag | | E-beam deposition of Ag | ||
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! Pre-clean | ! Pre-clean | ||
| | | Ar ion beam bombardment | ||
|RF Ar clean | | none | ||
| | | RF Ar clean | ||
|RF Ar clean | | none | ||
|RF Ar clean | | RF Ar clean | ||
| RF Ar clean | |||
| | | | ||
|- | |- | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to 1µm* | |10Å to 1µm* | ||
|10Å to 0.5µm (0.5µm not on all wafers) | |10Å to 0.5µm ** | ||
|10Å to 0.5µm **(0.5µm not on all wafers) | |||
|10Å to 2000Å | |10Å to 2000Å | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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! Deposition rate | ! Deposition rate | ||
| | |1 to 10Å/s | ||
| | |5Å/s | ||
|1 to 10Å/s | |||
|1 to 10Å/s | |1 to 10Å/s | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | ! Batch size | ||
| | |||
*Up to 4x6" wafers or | |||
*Up to 3x8" wafers *** or | |||
*smaller pieces | |||
| | | | ||
*Up to 1x4" wafers | *Up to 1x4" wafers | ||
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|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
!Allowed materials | !Allowed materials | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
| | | | ||
* Silicon | * Silicon | ||
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|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
! Comment | ! Comment | ||
| | | Pumpdown approx 20 min | ||
|Only very thin layers. | | Pumpdown approx 10 min | ||
| Only very thin layers. Pumpdown approx 1 hour. | |||
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|} | |} | ||
'''*''' ''For thicknesses above 200 nm permission | '''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk'' | ||
'''**''' ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk'' | |||
'''**''' ''Please ask responsible staff for 8" wafer holder'' | |||
Revision as of 10:20, 19 July 2018
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Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
Thermal deposition of Silver
| E-beam evaporation (Temescal) | Thermal evaporation (Thermal Evaporator) | Thermal evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | E-beam evaporation (III-V Dielectric evaporator) | |
|---|---|---|---|---|---|---|---|
| General description | E-beam deposition of Ag | Thermal deposition of Ag | Thermal deposition of Ag | E-beam deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | E-beam deposition of Ag |
| Pre-clean | Ar ion beam bombardment | none | RF Ar clean | none | RF Ar clean | RF Ar clean | |
| Layer thickness | 10Å to 1µm* | 10Å to 0.5µm ** | 10Å to 0.5µm **(0.5µm not on all wafers) | 10Å to 2000Å | 10Å to about 3000Å | 10Å to about 1000Å | 10Å to about 1000Å |
| Deposition rate | 1 to 10Å/s | 5Å/s | 1 to 10Å/s | 1 to 10Å/s | Depending on process parameters (also written in the logbook). | Dependent on process parameters. | 2 Å/s to 5 Å/s |
| Batch size |
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| Allowed materials |
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| Comment | Pumpdown approx 20 min | Pumpdown approx 10 min | Only very thin layers. Pumpdown approx 1 hour. |
* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk
** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk
** Please ask responsible staff for 8" wafer holder