Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions
→Molybdenum deposition: Took out Alcatel, added Temescal |
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| | |Ar ion source | ||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to 0. | |10Å to 0.6 µm* | ||
|10Å to 500 Å | |10Å to 500 Å | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |1Å/s to 10Å/s | ||
| Depends on process parameters, roughly about 1 Å/s | | Depends on process parameters, roughly about 1 Å/s | ||
|- | |- | ||
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! Batch size | ! Batch size | ||
| | | | ||
*Up to | *Up to 4x6" wafers | ||
*smaller pieces | *Up to 3x8" wafers (ask for holder) | ||
*Many smaller pieces | |||
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* Pieces or | * Pieces or | ||
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* Silicon | * Silicon | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
* | *Metals | ||
* | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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* Silicon | * Silicon | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | | As of August 2018, Mo has not yet been deposited in the Temescal. Contact the Thin Film group to develop a process. | ||
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'''*''' ''For thicknesses above | '''*''' ''For thicknesses above 600 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required to ensure enough material is present.'' | ||
Revision as of 14:47, 8 August 2018
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Molybdenum deposition
Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Temescal) | Sputter deposition (Lesker) | |
|---|---|---|
| General description | E-beam deposition of Mo | Sputter deposition of Mo |
| Pre-clean | Ar ion source | RF Ar clean |
| Layer thickness | 10Å to 0.6 µm* | 10Å to 500 Å |
| Deposition rate | 1Å/s to 10Å/s | Depends on process parameters, roughly about 1 Å/s |
| Batch size |
|
|
| Allowed materials |
|
|
| Comment | As of August 2018, Mo has not yet been deposited in the Temescal. Contact the Thin Film group to develop a process. |
* For thicknesses above 600 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required to ensure enough material is present.