Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions

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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])  
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])  
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Mo
| E-beam deposition of Mo  
| E-beam deposition of Mo  
| Sputter deposition of Mo  
| Sputter deposition of Mo  
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
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! Layer thickness
! Layer thickness
|10Å to 0.5 µm*
|10Å to 0.5 µm*
|10Å to 500 Å
|10Å to 500 Å
|10Å to 500 Å
|-
|-
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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|2Å/s to 15Å/s
| About 1 Å/s
| Depends on process parameters, roughly about 1 Å/s
| Depends on process parameters, roughly about 1 Å/s
|-
|-
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*Up to 1x4" wafers
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
*12x2" wafers or
*12x4" wafers or
*4x6" wafers
|
|
* Pieces or
* Pieces or
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* SU-8  
* SU-8  
* Metals  
* Metals  
|
* Silicon
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Silicon
* Silicon
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! Comment
! Comment
|
|
|Only very thin layers (up to 100nm).
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|
|-
|-

Revision as of 10:17, 19 September 2016

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Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

E-beam evaporation (Alcatel) Sputter deposition (Lesker)
General description E-beam deposition of Mo Sputter deposition of Mo
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 0.5 µm* 10Å to 500 Å
Deposition rate 2Å/s to 15Å/s Depends on process parameters, roughly about 1 Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
Comment


* For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.