Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
→Nickel deposition: removed Alcatel, added Temescal |
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| | |Ar ion bombardment | ||
|RF Ar clean | |RF Ar clean | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 1 µm* | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to 2000 Å | |10Å to 2000 Å | ||
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! Deposition rate | ! Deposition rate | ||
|2Å/s to | |2Å/s to 10Å/s | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
|1 to 10Å/s | |1 to 10Å/s | ||
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! Batch size | ! Batch size | ||
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*Up to | *Up to 4x6" wafers | ||
*smaller pieces | *Up to 3x8" wafers (ask for holder) | ||
*Many smaller pieces | |||
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*24x2" wafers or | *24x2" wafers or | ||
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* Silicon | * Silicon | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
* | *Metals | ||
* | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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* Silicon | * Silicon | ||
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'''*''' ''To deposit layers thicker then | '''*''' ''To deposit layers thicker then 600 microns permission is required from metal@danchip.dtu.dk to ensure enough material is present in the machine'' |
Revision as of 14:50, 8 August 2018
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Nickel deposition
Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | E-beam evaporation (Physimeca) | Sputter deposition (Lesker) | Electroplating (Electroplating-Ni) | |
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General description | E-beam deposition of Nickel | E-beam deposition of Nickel | E-beam deposition of Nickel | Sputter deposition of Nickel | Electroplating of Nickel |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | None | |
Layer thickness | 10Å to 1 µm* | 10Å to 1 µm* | 10Å to 2000 Å | 10Å to 2000 Å | A few µm to 1400 µm |
Deposition rate | 2Å/s to 10Å/s | 10Å/s to 15Å/s | 1 to 10Å/s | Depends on process parameters. About 1 Å/s | About 10 Å/s to 250 Å/s |
Batch size |
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Allowed materials |
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Base materials:
Seed metals:
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Comment | Thicknesses above 2000 Å requires special permission |
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Sample must be compatible with plating bath. Seed metal necessary. |
* To deposit layers thicker then 600 microns permission is required from metal@danchip.dtu.dk to ensure enough material is present in the machine