Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
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*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | *RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | ||
*Reactive Sputtering (never tested) | *Reactive Sputtering (never tested) | ||
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*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Stoichiometry | !Stoichiometry | ||
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*Not tested | *Not tested | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Film Thickness | !Film Thickness | ||
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* 0nm - 200nm | * 0nm - 200nm | ||
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* 0,3nm/min | * 0,3nm/min | ||
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*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | *0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | ||
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*unknown | *unknown | ||
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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* Up to 450<sup>o</sup>C | * Up to 450<sup>o</sup>C | ||
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*150<sup>o</sup>C - 350<sup>o</sup>C: | *150<sup>o</sup>C - 350<sup>o</sup>C: | ||
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!More info on Al<sub>2</sub>O<sub>3</sub> | !More info on Al<sub>2</sub>O<sub>3</sub> | ||
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
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* 1x 100 mm wafer | * 1x 100 mm wafer | ||
* 1x 150 mm wafer | * 1x 150 mm wafer | ||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
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*almost any | *almost any | ||
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*Silicon | *Silicon | ||
Revision as of 09:50, 19 September 2016
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Deposition of aluminium oxide
Aluminium oxide (Alumina, Al2O3 ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
Comparison of the methods for deposition of Alumium Oxide
| Sputter System Lesker | ALD Picosun 200 | |
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| Generel description |
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| Stoichiometry |
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| Film Thickness |
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| Deposition rate |
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| Step coverage |
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| Process Temperature |
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| More info on Al2O3 | ||
| Substrate size |
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| Allowed materials |
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