Specific Process Knowledge/Thin film deposition/Deposition of Tin: Difference between revisions

Revision as of 12:48, 30 August 2018

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Tin deposition

Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is being decommissioned, but has not yet been evaporated in the Physimeca or the Temescal, which we have now (August 2018)

	E-beam evaporation (Temescal)
General description	E-beam deposition of Sn (line-of-sight deposition)
Pre-clean	Ar ion clean
Layer thickness	10Å to 1µm*
Deposition rate	1Å/s to 10Å/s
Pre-clean	Ar ion bombardment
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) small pieces
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet
Comment	Tin has not yet been deposited in the Temescal to date (August 2018). Please contact the Thin Film group if you would like us to develop the process.

* For thicknesses above 600 nm permission is required.

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tin&action=edit click here]'''
+== Tin deposition ==
+Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is being decommissioned, but has not yet been evaporated in the Physimeca or the Temescal, which we have now (August 2018)
-Tin can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
 {| border="1" cellspacing="0" cellpadding="3"
 |-style="background:silver; color:black"
 !
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
 |-
 |-style="background:WhiteSmoke; color:black"
 ! General description
 | E-beam deposition of Sn
+(line-of-sight deposition)
 |-
 |-style="background:LightGrey; color:black"
 !Pre-clean
-|RF Ar clean
+|Ar ion  clean
 |-
 |-style="background:WhiteSmoke; color:black"
@@ Line 25: / Line 25: @@
 |-style="background:LightGrey; color:black"
 ! Deposition rate
-|2Å/s to 15Å/s
+|1Å/s to 10Å/s
 |-
@@ Line 31: / Line 31: @@
 |-style="background:WhiteSmoke; color:black"
 !Pre-clean
-|RF Ar clean
+|Ar ion bombardment
 |-style="background:LightGrey; color:black"
 ! Batch size
 |
-*Up to 1x4" wafers
+*Up to 4x6" wafers
+*Up to 3x8" wafers (ask for holder)
 *small pieces
 |-
@@ Line 45: / Line 46: @@
 |
 * Silicon
-* Silicon oxide
+*Silicon oxide
-* Silicon (oxy)nitride
+*Silicon (oxy)nitride
-* Photoresist
+*Photoresist
-* PMMA
+*PMMA
-* Mylar
+*Mylar
-* SU-8
+*Metals
-* Metals
+*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
 |-style="background:LightGrey; color:black"
 ! Comment
-|
+| Tin has not yet been deposited in the Temescal to date (August 2018).
+Please contact the Thin Film group if you would like us to develop the process.
 |}
-'''*''' ''For thicknesses above 200 nm permission is required.''
+'''*''' ''For thicknesses above 600 nm permission is required.''