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'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten&action=edit click here]'''  
'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten&action=edit click here]'''  


== Tungsten deposition ==


 
Tungsten (W) can be deposited by e-beam evaporation. It requires very high temperature to evaporate, so it is at the performance limit of the 6 kW power supplies of our systems. This means the deposition rate is limited. Additionally, the chamber (and substrate) will get hot during deposition despite water cooling, and this means the pressure rises during the deposition as the chamber is baked out. It is therefore not easy to deposit films much thicker than 50-60 nm. Talk to staff when you want to deposit W (write to thinfilm@danchip.dtu.dk). In the chart below you can compare the deposition equipment.
Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.




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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!   
!   
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam evaporation of W
| E-beam evaporation of W
| E-beam evaporation of W
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|Ar ion beam
|None
|-
|-


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 5000Å*  
|10Å to 600Å*
|10Å to 500Å*  
|-
|-


|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|0.5 Å/s to 2 Å/s
|-
|about 1 Å/s
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! Batch size
|
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*small pieces
|
|
*Up to 1x4" wafers
*Up to 1x4" wafers
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* SU-8  
* SU-8  
* Metals  
* Metals  
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comments
! Comments
|
| Substrate gets hot during deposition
(for a 60 nm film it rose above 123 C)
|}
|}


'''*''' ''For thicknesses above 200 nm permission is required''
'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@danchip.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.''
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