Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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|Process temperature | |Process temperature | ||
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|560 <sup>o</sup>C and 620 <sup>o</sup>C | |560 <sup>o</sup>C and 620 <sup>o</sup>C | ||
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Revision as of 11:40, 12 March 2008
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Furnace PolySi | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. |
| Layer thickness | 10Å to 1µm | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. |
| Deposition rate | 2Å/s to 15Å/s |
|
| Process temperature | ? | 560 oC and 620 oC |
| Step coverage | Poor | Good |
| Adhesion | Bad for pyrex, for other materials we do not know | Good for quartz, silicon oxide, silicon nitride, silicon |
| Substrate material allowed | Pyrex, Quartz, Silicon, metals, oxide, nitride, blue tape | Quartz, Silicon, oxide, nitride |
| Doping facility | None | Can be doped during deposition with Boron and/or Phosphorous |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |