Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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| align="center" valign="top"|
{| border="2" cellspacing="2" cellpadding="3" align="center" style="width:750px"
! colspan="5" |Deposition conditions at 150 <sup>o</sup>C
|-
!Number of cycles
|<b>Thickness (nm)</b>
|<b>Uniformity across 100mm Si substrate (%)</b>
|<b>Standard deviation error</b>
|<b>Refractive index @ 632.8 nm</b>


|-
|150
|15.38
|1.72
|0.18
|1.61
|-
|300
|28.67
|1.73
|0.36
|1.62
|-
|500
|46.93
|1.75
|0.57
|1.62
|-
|800
|73.46
|1.75
|0.92
|1.63
|-
|1088
|99.50
|1.74
|1.20
|1.63
|-
|}
|-
|-
|}
|}

Revision as of 17:02, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3 LT

Temperature: 80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.2 s
Purge time 5.0 s 10.0 s

Deposition rate: 0.089 nm/cycle (@120 oC)



Al2O3 deposition at 100 oC and 150 oC


Deposition conditions at 100 oC
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
150 14.11 2.18 0.225 1.56
300 25.94 0.68 0.14 1.59
500 41.35 1.87 0.60 1.59
800 65.05 2.28 1.13 1.59
1088 87.25 2.15 1.35 1.60


%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC


  • Al2O3/TiO2 multilayers grown on silicon trenches.
    Al2O3/TiO2 multilayers grown on silicon trenches.



Evgeniy Shkondin, DTU Danchip, 2014-2016.

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