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Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C)
Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C)
{| border="2" cellspacing="2" cellpadding="3" colspan="10"
|bgcolor="#98FB98" |'''Al<sub>2</sub>O<sub>3</sub> deposition at 100 <sup>o</sup>C and 150 <sup>o</sup>C'''
|-
|
{| {{table}}
| align="center" |
{| border="2" cellspacing="2" cellpadding="3"  align="center" style="width:750px"
! colspan="5" |Deposition conditions at 100 <sup>o</sup>C
|-
!Number of cycles
|<b>Thickness (nm)</b>
|<b>Uniformity across 100mm Si substrate (%)</b>
|<b>Standard deviation error</b>
|<b>Refractive index @ 632.8 nm</b>
|-
|150
|14.11
|2.18
|0.225
|1.56
|-
|300
|25.94
|0.68
|0.14
|1.59
|-
|500
|41.35
|1.87
|0.60
|1.59
|-
|800
|65.05
|2.28
|1.13
|1.59
|-
|1088
|87.25
|2.15
|1.35
|1.60
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="2" cellpadding="3" align="center" style="width:750px"
! colspan="5" |Deposition conditions at 150 <sup>o</sup>C
|-
!Number of cycles
|<b>Thickness (nm)</b>
|<b>Uniformity across 100mm Si substrate (%)</b>
|<b>Standard deviation error</b>
|<b>Refractive index @ 632.8 nm</b>
|-
|150
|15.38
|1.72
|0.18
|1.61
|-
|300
|28.67
|1.73
|0.36
|1.62
|-
|500
|46.93
|1.75
|0.57
|1.62
|-
|800
|73.46
|1.75
|0.92
|1.63
|-
|1088
|99.50
|1.74
|1.20
|1.63
|-
|}
|-
|}
|}
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==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==