Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
Line 6: Line 6:
<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on" widths="300px" heights="250px" perrow="3">
<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on" widths="300px" heights="250px" perrow="3">
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch
image:DUV_sin_01_2min19.jpg|Profile of lines with 3µm pitch
image:DUV_sin_01_2min19.jpg|Profile of lines with 4µm pitch
image:DUV_sin_01_2min20.jpg|Profile of line - zoom in on 3µm pitch
image:DUV_sin_01_2min20.jpg|Profile of 2µm line - zoom in on 4µm pitch
</gallery>
</gallery>

Revision as of 13:52, 16 October 2015

Feedback to this page: click here


THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

  • Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on

  • Profile of lines with 1µm pitch

  • Profile of lines with 4µm pitch

  • Profile of 2µm line - zoom in on 4µm pitch

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE/Nitride_etch_with_DUV_mask&oldid=20648"