Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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!Generel description | !Generel description | ||
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*RF sputtering from Al_2O_3 target | |||
*Reactive Sputtering | |||
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*Reactive Sputtering | *Reactive Sputtering | ||
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!Stoichiometry | !Stoichiometry | ||
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*Not tested | |||
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*Not tested | *Not tested | ||
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!Film Thickness | !Film Thickness | ||
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* 0nm - 200nm | |||
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* 0nm - 200nm | * 0nm - 200nm | ||
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!Deposition rate | !Deposition rate | ||
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* 0,3nm/min | |||
* | |||
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* Not tested | * Not tested | ||
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!Step coverage | !Step coverage | ||
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*unknown | |||
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*Very good | *Very good | ||
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!Process Temperature | !Process Temperature | ||
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* Up to 450<sup>o</sup>C | |||
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* Up to 400<sup>o</sup>C | * Up to 400<sup>o</sup>C | ||
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!Substrate size | !Substrate size | ||
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* chips | |||
* 1x 100 mm wafer | |||
* 1x 150 mm wafer | |||
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* 100 mm wafers (Up to 12 wafers at a time) | * 100 mm wafers (Up to 12 wafers at a time) | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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*almost any | |||
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*Silicon | *Silicon | ||