Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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*Reactive Sputtering | |||
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*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | ||
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*Not tested | |||
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*Al<sub>2</sub>O<sub>3</sub>, very good | *Al<sub>2</sub>O<sub>3</sub>, very good | ||
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* 0nm - 200nm | |||
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* 0nm - 100nm | * 0nm - 100nm | ||
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* Not tested | |||
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*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | *0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | ||
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*Very good | |||
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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* Up to 400<sup>o</sup>C | |||
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*150<sup>o</sup>C - 350<sup>o</sup>C: | *150<sup>o</sup>C - 350<sup>o</sup>C: | ||
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* - | |||
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
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* 100 mm wafers (Up to 12 wafers at a time) | |||
* 150 mm wafers (Up to 4 wafers at a time) | |||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
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*Silicon | |||
*Silicon oxide, silicon nitride | |||
*Quartz/fused silica | |||
*Photoresist | |||
*PMMA | |||
*Mylar | |||
*SU-8 | |||
*Any metals | |||
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*Silicon | *Silicon |
Revision as of 11:40, 28 September 2015
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Deposition of aluminium oxide
Aluminium oxide (Alumina, Al2O3 ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System or the Cryofox PVD co-sputter/evaporation. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
Comparison of the methods for deposition of Alumium Oxide
Sputter System Lesker | Cryofox PVD co-sputter/evaporation | ALD Picosun 200 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on Al2O3 |
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Substrate size |
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Allowed materials |
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