Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

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*Reactive Sputtering
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*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
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*Not tested
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*Al<sub>2</sub>O<sub>3</sub>, very good
*Al<sub>2</sub>O<sub>3</sub>, very good
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* 0nm - 200nm
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* 0nm - 100nm
* 0nm - 100nm
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* Not tested
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*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
*0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
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*Very good
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)  
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* Up to 400<sup>o</sup>C
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*150<sup>o</sup>C - 350<sup>o</sup>C:
*150<sup>o</sup>C - 350<sup>o</sup>C:
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* -
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
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* 100 mm wafers (Up to 12 wafers at a time)
* 150 mm wafers (Up to 4 wafers at a time)
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*1-5 100 mm wafers
*1-5 100 mm wafers
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*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Photoresist
*PMMA
*Mylar
*SU-8
*Any metals
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*Silicon  
*Silicon  

Revision as of 11:40, 28 September 2015

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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al2O3 ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System or the Cryofox PVD co-sputter/evaporation. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

Comparison of the methods for deposition of Alumium Oxide

Sputter System Lesker Cryofox PVD co-sputter/evaporation ALD Picosun 200
Generel description
  • Reactive Sputtering
  • ALD (atomic layer deposition) of Al2O3
Stoichiometry
  • Not tested
  • Al2O3, very good
Film Thickness
  • 0nm - 200nm
  • 0nm - 100nm
Deposition rate
  • Not tested
  • 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
Step coverage
  • Very good
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature
  • Up to 400oC
  • 150oC - 350oC:
More info on Al2O3
  • -
Substrate size
  • 100 mm wafers (Up to 12 wafers at a time)
  • 150 mm wafers (Up to 4 wafers at a time)
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • Several smaller samples
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)