Specific Process Knowledge/Thin film deposition/Deposition of Alumina

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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al₂O₃ ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System or the Cryofox PVD co-sputter/evaporation. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

• Al₂O₃ deposition using ALD
• Lesker Sputter System
• Cryofox PVD co-sputter/evaporation

Comparison of the methods for deposition of Alumium Oxide

	Sputter System Lesker	Cryofox PVD co-sputter/evaporation	ALD Picosun 200
Generel description			ALD (atomic layer deposition) of Al2O3
Stoichiometry			Al2O3, very good
Film Thickness			0nm - 100nm
Deposition rate			0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
Step coverage			Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature			150oC - 350oC:
More info on Al2O3			Al2O3 deposition using ALD
Substrate size			1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
Allowed materials			Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al2O3 Ti, TiO2 Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)