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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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Bureaucrats, danchip, Administrators
2,908 edits
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In beaker or PP-bath in the fume hood in cleanroom 2:  
In beaker or PP-bath in the fume hood in cleanroom 2:  
*All materials
*Photoresist
*Silicon nitride
*PolySi
*Blue film
 
In RCA bench:  
In RCA bench:  
*Only new wafers from the box or during RCA cleaning
*No masking material
|
|
*Photoresist
*Photoresist
Line 64: Line 68:
*TEOS:~265nm/min
*TEOS:~265nm/min
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|-
|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>'''
|'''Life time of the photoresist'''
|~21
|~½ hour
|<21
|~½ hour
|~½ hour
|-
|-
|'''Batch size'''
|'''Batch size'''
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|
1-25 wafers at a time
1-25 wafers of 4" at a time
|
Beaker:
1-5 wafer of 4" at a time
 
RCA bench: 1-25 wafers of 4" at a time
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1-25 wafer at a time
1-25 wafer of 4" at a time
|-
|-
|'''Size of substrate'''
|'''Size of substrate'''
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2-6" wafers
4" wafers
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2"-6" wafers
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2-6" wafers
4" wafers
|-
|-
|'''Allowed materials'''
|'''Allowed materials'''
Line 85: Line 97:
*Silicon nitrides
*Silicon nitrides
*Silicon oxides
*Silicon oxides
*Photoresist
|
In beaker or PP-bath in the fume hood in cleanroom 2:
*All materials
In RCA bench:
*Only new wafers from the box or during RCA cleaning
|
|
*Silicon
*Silicon
*Silicon nitrides
*Silicon nitrides
*Silicon oxides
*Silicon oxides
*Photoresist
|-
|-
|}
|}
[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]]
[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]]
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