Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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In beaker or PP-bath in the fume hood in cleanroom 2: | In beaker or PP-bath in the fume hood in cleanroom 2: | ||
* | *Photoresist | ||
*Silicon nitride | |||
*PolySi | |||
*Blue film | |||
In RCA bench: | In RCA bench: | ||
* | *No masking material | ||
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*Photoresist | *Photoresist | ||
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*TEOS:~265nm/min | *TEOS:~265nm/min | ||
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|''' | |'''Life time of the photoresist''' | ||
|~ | |~½ hour | ||
| | |~½ hour | ||
|~½ hour | |||
|- | |- | ||
|'''Batch size''' | |'''Batch size''' | ||
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1-25 wafers at a time | 1-25 wafers of 4" at a time | ||
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Beaker: | |||
1-5 wafer of 4" at a time | |||
RCA bench: 1-25 wafers of 4" at a time | |||
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1-25 wafer at a time | 1-25 wafer of 4" at a time | ||
|- | |- | ||
|'''Size of substrate''' | |'''Size of substrate''' | ||
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2-6" wafers | 4" wafers | ||
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2"-6" wafers | |||
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4" wafers | |||
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|'''Allowed materials''' | |'''Allowed materials''' | ||
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*Silicon nitrides | *Silicon nitrides | ||
*Silicon oxides | *Silicon oxides | ||
*Photoresist | |||
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In beaker or PP-bath in the fume hood in cleanroom 2: | |||
*All materials | |||
In RCA bench: | |||
*Only new wafers from the box or during RCA cleaning | |||
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*Silicon | *Silicon | ||
*Silicon nitrides | *Silicon nitrides | ||
*Silicon oxides | *Silicon oxides | ||
*Photoresist | |||
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[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | [[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] |
Revision as of 13:47, 21 February 2008
Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent))
Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stable etch rate and more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch.
SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch. It is also a good idea to wet the sample in water before etching.
Silicon oxide etch data
BHF | 5% HF | SIO | |
---|---|---|---|
General description |
Etching of silicon oxide with a stable etch rate |
Mainly for removing native oxide |
Etching of silicon oxide - especially for etching small holes |
Chemical solution | BHF | 5% HF | BHF with wetting agent |
Process temperature | Room temperature | Room temperature | Room temperature |
Possible masking materials |
|
In beaker or PP-bath in the fume hood in cleanroom 2:
In RCA bench:
|
|
Etch rate |
|
|
|
Life time of the photoresist | ~½ hour | ~½ hour | ~½ hour |
Batch size |
1-25 wafers of 4" at a time |
Beaker: 1-5 wafer of 4" at a time RCA bench: 1-25 wafers of 4" at a time |
1-25 wafer of 4" at a time |
Size of substrate |
4" wafers |
2"-6" wafers |
4" wafers |
Allowed materials |
|
In beaker or PP-bath in the fume hood in cleanroom 2:
In RCA bench:
|
|