Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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In beaker or PP-bath in the fume hood in cleanroom 2:  
In beaker or PP-bath in the fume hood in cleanroom 2:  
*All materials
*Photoresist
*Silicon nitride
*PolySi
*Blue film
 
In RCA bench:  
In RCA bench:  
*Only new wafers from the box or during RCA cleaning
*No masking material
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*Photoresist
*Photoresist
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*TEOS:~265nm/min
*TEOS:~265nm/min
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|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>'''
|'''Life time of the photoresist'''
|~21
|~½ hour
|<21
|~½ hour
|~½ hour
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|-
|'''Batch size'''
|'''Batch size'''
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1-25 wafers at a time
1-25 wafers of 4" at a time
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Beaker:
1-5 wafer of 4" at a time
 
RCA bench: 1-25 wafers of 4" at a time
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1-25 wafer at a time
1-25 wafer of 4" at a time
|-
|-
|'''Size of substrate'''
|'''Size of substrate'''
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2-6" wafers
4" wafers
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2"-6" wafers
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2-6" wafers
4" wafers
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|-
|'''Allowed materials'''
|'''Allowed materials'''
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*Silicon nitrides
*Silicon nitrides
*Silicon oxides
*Silicon oxides
*Photoresist
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In beaker or PP-bath in the fume hood in cleanroom 2:
*All materials
In RCA bench:
*Only new wafers from the box or during RCA cleaning
|
|
*Silicon
*Silicon
*Silicon nitrides
*Silicon nitrides
*Silicon oxides
*Silicon oxides
*Photoresist
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[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]]
[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]]

Revision as of 13:47, 21 February 2008

Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent))

Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3

Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stable etch rate and more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch.

SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch. It is also a good idea to wet the sample in water before etching.


Silicon oxide etch data

BHF 5% HF SIO
General description

Etching of silicon oxide with a stable etch rate

Mainly for removing native oxide

Etching of silicon oxide - especially for etching small holes

Chemical solution BHF 5% HF BHF with wetting agent
Process temperature Room temperature Room temperature Room temperature
Possible masking materials
  • Photoresist
  • Silicon nitride
  • PolySi
  • Blue film

In beaker or PP-bath in the fume hood in cleanroom 2:

  • Photoresist
  • Silicon nitride
  • PolySi
  • Blue film

In RCA bench:

  • No masking material
  • Photoresist
  • Silicon nitride
  • PolySi
  • Blue film
Etch rate
  • Wet thermal oxide:~80nm/min
  • PECVD1 (standard):~147nm/min
  • TEOS:~265nm/min
  • Wet thermal oxide:~25nm/min
  • PECVD1 (standard):~87nm/min
  • TEOS:~153nm/min
  • Wet thermal oxide:~80nm/min
  • PECVD1 (standard):~147nm/min
  • TEOS:~265nm/min
Life time of the photoresist ~½ hour ~½ hour ~½ hour
Batch size

1-25 wafers of 4" at a time

Beaker: 1-5 wafer of 4" at a time

RCA bench: 1-25 wafers of 4" at a time

1-25 wafer of 4" at a time

Size of substrate

4" wafers

2"-6" wafers

4" wafers

Allowed materials
  • Silicon
  • Silicon nitrides
  • Silicon oxides
  • Photoresist

In beaker or PP-bath in the fume hood in cleanroom 2:

  • All materials

In RCA bench:

  • Only new wafers from the box or during RCA cleaning
  • Silicon
  • Silicon nitrides
  • Silicon oxides
  • Photoresist
SIO etch (BHF with wetting agent): positioned in cleanroom 4