Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
New page: ==Dope with boron== The furnace A2 boron predep can be used to predeposit silicon wafers with boron. The silicon wafers are positioned in a siliconcarbide boat just next to wafers of boron... |
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==Dope with boron== | ==Dope with boron== | ||
The furnace A2 boron predep can be used to predeposit silicon wafers with boron. The silicon wafers are positioned in a | The furnace A2 boron predep can be used to predeposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Boron is predeposited on the silicon wafers. -Rune, hvad er det der sker? | ||
The concentration of boron in the wafer depends on the process temperature. | The concentration of boron in the wafer depends on the process temperature. | ||
The depth profile depends of the process time | The depth profile depends of the process time | ||
Revision as of 13:56, 7 February 2008
Dope with boron
The furnace A2 boron predep can be used to predeposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Boron is predeposited on the silicon wafers. -Rune, hvad er det der sker?
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time