Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
No edit summary |
|||
| Line 13: | Line 13: | ||
! Chromium etch 2 | ! Chromium etch 2 | ||
|- | |- | ||
!General description | |||
| | | | ||
Etch of chromium | Etch of chromium | ||
| Line 19: | Line 19: | ||
Etch of chromium | Etch of chromium | ||
|- | |- | ||
!Chemical solution | |||
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | |HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | ||
|Commercial chromium etch | |Commercial chromium etch | ||
CE 8002-A | CE 8002-A | ||
|- | |- | ||
!Process temperature | |||
|Room temperature | |Room temperature | ||
| Line 31: | Line 31: | ||
|- | |- | ||
!Possible masking materials: | |||
| | | | ||
Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
| Line 43: | Line 43: | ||
~10-20 nm/min | ~10-20 nm/min | ||
|- | |- | ||
!Batch size | |||
| | | | ||
1-25 wafers at a time | 1-25 wafers at a time | ||
| Line 55: | Line 55: | ||
4" wafers | 4" wafers | ||
|- | |- | ||
!Allowed materials | |||
| | | | ||
No restrictions. | No restrictions. | ||