Specific Process Knowledge/Etch: Difference between revisions

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*[[/Etching of Titanium|Titanium]] - ''writer:Louise''
*[[/Etching of Titanium|Titanium]] - ''writer:Louise''
*[[/Etching of Gold|Gold]] - ''writer:Majken''
*[[/Etching of Gold|Gold]] - ''writer:Majken''
*[[/Etching of Platin|Platin]] - ''writer:Majken''
*[[/Etching of Platin|Platin]]
*[[/Etching of Polymer|Polymer]]
*[[/Etching of Polymer|Polymer]]
*[[/Etching of Silicon|Silicon]]  
*[[/Etching of Silicon|Silicon]]  

Revision as of 10:02, 31 January 2008

Wet etch or dry etch

Etching at Danchip can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.

Advantages of wet chemistry over dry etch techniques are:

  • A often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
  • Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
  • Easy to start op new etch solutions.

Advantages of dry etch over wet chemistry:

  • Anisotropic etch can be done.
  • The etch do not attach the backside of the sample.

Choose material to be etched

Choose a dry etch equipment

Choose a wet etch