Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions

Revision as of 12:29, 30 January 2008

Wet Poly Etch

The wet Poly Etch is an isotropic silicon etch. This holds for both a poly-silicon thin-film as well as single-crystalline material such as a Si(100) surface. The Poly Etch process is placed in a dedicated PP-tank in a laminar-flow bench in cleanroom 4.

The Poly Etch is typically used for opening holes in poly-silicon thin-films, using photoresist as an etch mask. Due to its isotropic nature the under-etching (etch-bias) at least amounts to the thickness of the poly-silicon layer. Another example of usage is etching of "circular-shaped" holes in silicon substrates.

The Poly Etch is based on the combined oxidation of silicon followed by dissolution of the silicon oxide.

bainitially 85 wt% H₃PO₄ which is heated up to the boiling temperature - ca. 157 ^oC. Water is allowed to boil off thus raising the concentration and the boiling temperature of the solution until a boiling temperature of 180 ^oC is reached. Thereafter, the wafers are submerged into the bath and the water-cooled lid is closed to maintain the concentration and the boiling temperature. In some cases a lower boiling temperature is chosen - typically 160 ^oC - which lowers the etch rate and improves the selectivity R_Si₃N₄ / R_SiO₂.

NB: Great care has to be taken in this process due to risk of "shock-boiling"

Nitride etch - key facts

	Nitride etch @ 180 ^oC	Nitride etch @ 160 ^oC
General description	Etch/strip of silicon nitride	Etch/strip of silicon nitride
Chemical solution	H₃PO₄ (85 wt%)	H₃PO₄ (85 wt%)
Process temperature	180 ^oC	160 ^oC
Possible masking materials:	Thermal oxide (converted si-rich surface) LPCVD-oxide (TEOS) PECVD-oxide	Thermal oxide (converted si-rich surface) LPCVD-oxide (TEOS) PECVD-oxide
Etch rate	~85 Å/min (stoichiometric Si₃N₄) ~60 Å/min (si-rich Si₃N₄) ~30 Å/min (annealed si-rich Si₃N₄) ~4 Å/min (Thermal oxide)	~26 Å/min (si-rich Si₃N₄) ~? Å/min (Thermal oxide)
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	2-6" wafers	2-6" wafers

@@ Line 7: / Line 7: @@
 The Poly Etch is typically used for opening holes in poly-silicon thin-films, using photoresist as an etch mask. Due to its isotropic nature the under-etching (etch-bias) at least amounts to the thickness of the poly-silicon layer. Another example of usage is etching of "circular-shaped" holes in silicon substrates.
-The process is mainly used to strip silicon nitride (maskless), but can also be used for masked etching of silicon nitride using some kind of silicon oxide as etch mask. However, the wet silicon nitride etch is isotropic meaning that the under-etching (etch-bias) at least amounts to the thickness of the silicon nitride layer.
+The Poly Etch is based on the combined oxidation of silicon followed by dissolution of the silicon oxide.
-The etch solution is initially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 157 <sup>o</sup>C. Water is allowed to boil off thus raising the concentration and the boiling temperature of the solution until a boiling temperature of 180 <sup>o</sup>C is reached. Thereafter, the wafers are submerged into the bath and the water-cooled lid is closed to maintain the concentration and the boiling temperature. In some cases a lower boiling temperature is chosen - typically 160 <sup>o</sup>C - which lowers the etch rate and improves the selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>.
+bainitially 85 wt% H<sub>3</sub>PO<sub>4</sub> which is heated up to the boiling temperature - ca. 157 <sup>o</sup>C. Water is allowed to boil off thus raising the concentration and the boiling temperature of the solution until a boiling temperature of 180 <sup>o</sup>C is reached. Thereafter, the wafers are submerged into the bath and the water-cooled lid is closed to maintain the concentration and the boiling temperature. In some cases a lower boiling temperature is chosen - typically 160 <sup>o</sup>C - which lowers the etch rate and improves the selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>.