Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
|-  
|-  
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|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|Sputter deposition of Nickel
|Electroplating of Nickel
|Electroplating of Nickel
|-
|-
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|RF Ar clean
|RF Ar clean
|
|
|RF Ar clean
|None
|None
|-
|-
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|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1000 Å
|10Å to 1000 Å
|10Å to 2000 Å
|10Å to 2000 Å
|10Å to 2000 Å
|A few µm to 1400 µm
|A few µm to 1400 µm
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|About 1Å/s  
|About 1Å/s  
|1 to 10Å/s
|1 to 10Å/s
|Depends on process parameters. About 1 Å/s
|About 10 Å/s to 250 Å/s
|About 10 Å/s to 250 Å/s


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*1x 4" wafers or
*1x 4" wafers or
*Several smaller pieces  
*Several smaller pieces  
|
* Pieces or
* 1x4" wafer or
* 1x6" wafer
|
|
*1x2" wafer or
*1x2" wafer or
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* Mylar  
* Mylar  


|
* Silicon
* Silicon
* Silicon oxide  
* Silicon oxide  
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* Mylar  
* Mylar  
* SU-8  
* SU-8  
* Metals
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* Metals  
* Metals  
|
|
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*Thicknesses above 2000 Å  requires special permission
*Thicknesses above 2000 Å  requires special permission
|Only very thin layers (up to 100nm).
|Only very thin layers (up to 100nm).
|
|
|
|Sample must be compatible with plating bath. Seed metal necessary.
|Sample must be compatible with plating bath. Seed metal necessary.

Revision as of 11:05, 21 October 2014

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Nickel deposition

Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) E-beam evaporation (Physimeca) Sputter deposition (Lesker) Electroplating (Electroplating-Ni)
General description E-beam deposition of Nickel E-beam deposition of Nickel E-beam deposition of Nickel E-beam deposition of Nickel Sputter deposition of Nickel Electroplating of Nickel
Pre-clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean None
Layer thickness 10Å to 5000 Å* 10Å to 1 µm* 10Å to 1000 Å 10Å to 2000 Å 10Å to 2000 Å A few µm to 1400 µm
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s 1 to 10Å/s Depends on process parameters. About 1 Å/s About 10 Å/s to 250 Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • 1x2" wafer or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • Metals

Base materials:

  • Silicon
  • Polymers with Tg > 65°C
  • Cross-linked or hard baked resists supported by one of the above two materials

Seed metals:

  • NiV (75 - 100 nm recommended)
  • Ti (~5 nm) + Au (75-100 nm recommended)
  • Cr (~5 nm) + Au (75-100 nm recommended)
  • TiW
  • Cr
Comment Thicknesses above 2000 Å requires special permission Only very thin layers (up to 100nm). Sample must be compatible with plating bath. Seed metal necessary.

* To deposit layers thicker then 2000 Å permission is required (contact Thin film group)

Stress in Nickel films