Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | |||
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
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| E-beam deposition of Ag | | E-beam deposition of Ag | ||
| Thermal deposition of Ag | | Thermal deposition of Ag | ||
| E-beam deposition of Ag | |||
| E-beam deposition of Ag | | E-beam deposition of Ag | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
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|10Å to 0.5µm (0.5µm not on all wafers) | |10Å to 0.5µm (0.5µm not on all wafers) | ||
|10Å to 1000Å | |10Å to 1000Å | ||
|10Å to 2000Å | |||
|10Å to about 5000Å | |10Å to about 5000Å | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
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|1Å/s to 10 Å/s | |1Å/s to 10 Å/s | ||
|About 1Å/s | |About 1Å/s | ||
|1 to 10Å/s | |||
|Dependent on [[/Sputter rates for Ag PVD co-sputter/evaporation|process parameters]]. | |Dependent on [[/Sputter rates for Ag PVD co-sputter/evaporation|process parameters]]. | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
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*12x4" wafers or | *12x4" wafers or | ||
*12x2" wafers | *12x2" wafers | ||
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*1x 2" wafer or | |||
*1x 4" wafers or | |||
*Several smaller pieces | |||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
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* III-V materials | |||
* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
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* Silicon | * Silicon | ||
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|Only very thin layers. | |Only very thin layers. | ||
|Only very thin layers (up to 100nm). | |Only very thin layers (up to 100nm). | ||
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Revision as of 11:55, 12 September 2014
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Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
- Sputter deposition of Silver in PVD so-sputter/evaporation.
- Sputter deposition of Silver in Wordentec.
Thermal deposition of Silver
| E-beam evaporation (Alcatel) | Thermal evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | E-beam evaporation (Physimeca) | Sputter evaporation (PVD co-sputter/evaporation) | Sputter evaporation (Wordentec) | Sputter deposition (Lesker) | |
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| General description | E-beam deposition of Ag | Thermal deposition of Ag | E-beam deposition of Ag | E-beam deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag |
| Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | |
| Layer thickness | 10Å to 1µm* | 10Å to 0.5µm (0.5µm not on all wafers) | 10Å to 1000Å | 10Å to 2000Å | 10Å to about 5000Å | 10Å to about 3000Å | 10Å to about 1000Å |
| Deposition rate | 2Å/s to 15Å/s | 1Å/s to 10 Å/s | About 1Å/s | 1 to 10Å/s | Dependent on process parameters. | Depending on process parameters (also written in the logbook). | Dependent on process parameters. |
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| Comment | Only very thin layers. | Only very thin layers (up to 100nm). |
* For thicknesses above 200 nm permission is required.