Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | |||
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| Thermal deposition of Ag | | Thermal deposition of Ag | ||
| E-beam deposition of Ag | | E-beam deposition of Ag | ||
| Sputter deposition of Ag | |||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
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! Pre-clean | ! Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
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|10Å to about 5000Å | |10Å to about 5000Å | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about 1000Å | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|Dependent on [[/Sputter rates for Ag PVD co-sputter/evaporation|process parameters]]. | |Dependent on [[/Sputter rates for Ag PVD co-sputter/evaporation|process parameters]]. | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
|Dependent on process parameters. | |||
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*24x2" wafers | *24x2" wafers | ||
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*1x6" wafers or | |||
*1x4" wafers or | |||
*smaller pieces | |||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
!Allowed materials | !Allowed materials | ||
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* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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* Silicon | * Silicon | ||
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|Only very thin layers. | |Only very thin layers. | ||
|Only very thin layers (up to 100nm). | |Only very thin layers (up to 100nm). | ||
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Revision as of 09:17, 4 August 2014
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Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
- Sputter deposition of Silver in PVD so-sputter/evaporation.
- Sputter deposition of Silver in Wordentec.
Thermal deposition of Silver
E-beam evaporation (Alcatel) | Thermal evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | Sputter evaporation (PVD co-sputter/evaporation) | Sputter evaporation (Wordentec) | Sputter deposition (Lesker) | |
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General description | E-beam deposition of Ag | Thermal deposition of Ag | E-beam deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag |
Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm* | 10Å to 0.5µm (0.5µm not on all wafers) | 10Å to 1000Å | 10Å to about 5000Å | 10Å to about 3000Å | 10Å to about 1000Å |
Deposition rate | 2Å/s to 15Å/s | 1Å/s to 10 Å/s | About 1Å/s | Dependent on process parameters. | Depending on process parameters (also written in the logbook). | Dependent on process parameters. |
Batch size |
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Allowed materials |
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Comment | Only very thin layers. | Only very thin layers (up to 100nm). |
* For thicknesses above 200 nm permission is required.