Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum

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Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment. In PVD co-sputter/evaporation only VERY thin layers of Mo can be deposited.

	E-beam evaporation (Alcatel)	E-beam evaporation (PVD co-sputter/evaporation)	Sputter deposition (Lesker)
General description	E-beam deposition of Mo	E-beam deposition of Mo	Sputter deposition of Mo
Pre-clean	RF Ar clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 0.5 µm*	10Å to 500 Å	10Å to 500 Å
Deposition rate	2Å/s to 15Å/s	About 1 Å/s	Depends on process parameters, roughly about 1 Å/s
Batch size	Up to 1x4" wafers smaller pieces	12x2" wafers or 12x4" wafers or 4x6" wafers	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8
Comment		Only very thin layers (up to 100nm).

* For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.