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Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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!
!
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*RF sputtering of TiO2 target
*RF sputtering of TiO2 target
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* E-beam evaporation of TiO2
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*unknown
*unknown
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* unknown
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*~10nm - ~0.5µm(>2h)
*~10nm - ~0.5µm(>2h)
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*~10nm - ~200 nm
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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*3 - 5 nm/min (RF sputtering)
*3 - 5 nm/min (RF sputtering)
*0.3 - 0.5nm/min
*0.3 - 0.5nm/min
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* 1 - 2 Å/s
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Not Known
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*Not Known
*Not Known
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*Done at RT. There is a possibility to run at higher temperatures
*Done at RT. There is a possibility to run at higher temperatures
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* Sample temperature can be set to 20-250 <sup>o</sup>C
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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*
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*
*
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*1x 100 mm wafers
*1x 100 mm wafers
*1x 150 mm wafers  
*1x 150 mm wafers  
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*1x 2" wafer or
*several smaller samples
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*Almost any materials
*Almost any materials
*Pb and poisonous materials only after special agreement
*Pb and poisonous materials only after special agreement
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