Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

@@ Line 7: / Line 7: @@
 <br clear="all" />
 {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
-|-
 |-
 |-style="background:silver; color:black"
 !
 ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 ! E-beam evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]])
 |-
 |-style="background:WhiteSmoke; color:black"
-! Batch size
+! General description
-|
+|Thermal deposition of Ge
-*24x 2" wafers or
+|E-beam deposition of Ge
-*6x 4" wafers or
-*6x 6" wafers
-|
-*1x 2" wafer or
-*1x 4" wafers or
-*Several smaller pieces
 |-
 |-style="background:LightGrey; color:black"
 ! Pre-clean
@@ Line 42: / Line 37: @@
 |From 5 Å/s up to 10/s
 |-
 |-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*24x 2" wafers or
+*6x 4" wafers or
+*6x 6" wafers
+|
+*1x 2" wafer or
+*1x 4" wafers or
+*Several smaller pieces
+|-
+|-style="background:LightGrey; color:black"
 ! Allowed substrates
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 * Quartz wafers
 * Pyrex wafers
-|-style="background:LightGrey; color:black"
+|-style="background:WhiteSmoke; color:black"
 !Allowed materials
@@ Line 74: / Line 84: @@
 * Mylar
-|-style="background:WhiteSmoke; color:black"
+|-style="background:LightGrey; color:black"
 ! Comment
 |Recommended for unexposed e-beam resist
-|
+|.
 |}