Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]])
! E-beam evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! General description
|
|Thermal deposition of Ge
*24x 2" wafers or
|E-beam deposition of Ge
*6x 4" wafers or
*6x 6" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
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|From 5 Å/s up to 10/s  
|From 5 Å/s up to 10/s  
|-
|-


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
|
*24x 2" wafers or
*6x 4" wafers or
*6x 6" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|-
|-style="background:LightGrey; color:black"


! Allowed substrates
! Allowed substrates
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* Quartz wafers  
* Quartz wafers  
* Pyrex wafers  
* Pyrex wafers  
|-style="background:LightGrey; color:black"
 
|-style="background:WhiteSmoke; color:black"


!Allowed materials
!Allowed materials
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* Mylar  
* Mylar  


|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
! Comment
! Comment
|Recommended for unexposed e-beam resist
|Recommended for unexposed e-beam resist
|
|.


|}
|}

Revision as of 13:10, 4 April 2014

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Deposition of Germanium

Germanium can be deposited by thermal evaporation.


Thermal evaporation (Wordentec) E-beam evaporation (Physimeca)
General description Thermal deposition of Ge E-beam deposition of Ge
Pre-clean RF Ar clean -
Layer thickness 10Å to about 2000Å 10Å to about 3000Å
Deposition rate From 0.4 Å/s up to about ~2Å/s From 5 Å/s up to 10/s
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
Comment Recommended for unexposed e-beam resist .
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