Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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!Stoichiometry | !Stoichiometry | ||
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Can probably be varied (sputter target: Ti, O2 added during deposition) | *Can probably be varied (sputter target: Ti, O2 added during deposition) | ||
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*A | *A | ||
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!Deposition rate | !Deposition rate | ||
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* | *3.0-3.5nm/min ± ? | ||
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* | * | ||
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!Step coverage | !Step coverage | ||
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* | *Not Known | ||
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* | * | ||
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!Process Temperature | !Process Temperature | ||
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* | *Expected to be below 100<sup>o</sup>C | ||
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* | * | ||
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!More info on TiO2 | !More info on TiO2 | ||
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* | *[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]] | ||
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* | * | ||
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!Substrate size | !Substrate size | ||
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* | *1 50mm wafer | ||
* | *1 100mm wafer | ||
* | *1 150mm wafer | ||
* | *1 200mm wafer | ||
*Smaller pieces can be mounted with capton tape | |||
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*<nowiki>#</nowiki> small samples | *<nowiki>#</nowiki> small samples | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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* | *Almost any materials | ||
* | *not Pb and very poisonous materials | ||
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*Allowed material 1 | *Allowed material 1 | ||