Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Knil (talk | contribs)
DCH-Employees-701
420 edits
No edit summary
Knil (talk | contribs)
DCH-Employees-701
420 edits
No edit summary
Line 14: Line 14:
!  
!  
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]])
! E-beam evaporation ([[Specific_Process_Knowledge/III-V_Process/thin_film_dep/physimeca|Physimeca]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"

Revision as of 14:59, 17 March 2014

Feedback to this page: click here


Deposition of Germanium

Germanium can be deposited by thermal evaporation.


Thermal evaporation (Wordentec) E-beam evaporation (Physimeca)
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
Pre-clean RF Ar clean -
Layer thickness 10Å to about 2000Å 10Å to about 3000Å
Deposition rate From 0.4 Å/s up to about ~2Å/s From 5 Å/s up to 10/s
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
Comment Recommended for unexposed e-beam resist
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Germanium&oldid=13834"