Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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! | ! General description | ||
| | | E-beam evaporation of W | ||
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! Deposition rate | ! Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
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! Batch size | |||
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*Up to 1x4" wafers | |||
*smaller pieces | |||
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! Allowed materials | ! Allowed materials | ||
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* Metals | * Metals | ||
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! Comments | ! Comments | ||
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Revision as of 17:17, 25 March 2014
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Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | |
|---|---|
| General description | E-beam evaporation of W |
| Pre-clean | RF Ar clean |
| Layer thickness | 10Å to 5000Å* |
| Deposition rate | 2Å/s to 15Å/s |
| Batch size |
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| Allowed materials |
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| Comments |
* For thicknesses above 200 nm permission is required